When the centre of a half bridge goes low the capacitor is charged through a diode and this charge is used to later drive the gate of the high side fet a few volts above the source voltage so as to switch it on.
High side gate driver charge pump.
Output switches high d1 turns off and the other side of c2 is charged to vcc.
Ti discrete charge pump design slva398a and ir hv floating mos gate driver ics an 978.
It contains a completely self contained charge pump to fully enhance an n channel mosfet switch with no external components when the internal drain comparator senses that the switch current has exceeded the preset leve.
Digital power control drivers powertrain modules 8 digital power isolated controllers 19 gallium nitride gan ics 7 gate drivers 227 half bridge drivers 63 isolated gate drivers 49 low side drivers 115 lcd oled display power drivers 80 led drivers 355 automotive led drivers 82 backlight led drivers 85 flash led.
The tle7183qu is designed for a 12 v power net.
Here is a tested version of floating charge pump.
Typical applications are cooling fan water pump electrohydraulic and electric power steering.
The charge pump typically supplies 30μa charging 800pf of gate capacitance in 400μs vbatt 15v.
Because the capacitor retains the voltage that passes across it the resulting waveform is a square wave that goes from vcc to twice vcc that is 2 vcc.
The lt1910 is a high side gate driver that allows the use of low cost n channel power mosfets for high side switching applications.
I found two documents particularly helpful.
The max1614 uses an internal monolithic charge pump and low dropout linear regulator to supply the required 8v vgs voltage to fully enhance an n channel mosfet high side switch figure 1.
Addition of a simple charge pump both the fast switching.
The mic5019 operates from a 2 7v to 9v supply and generates gate voltages of 9 2v from a 3v supply and 16v from a 9v supply.
8vboost charge pump boost capacitor.
For slower turn on times simply.
The mic5019 is a high side mosfet driver with integrated charge pump designed to switch an n channel enhancement type mosfet control signal in high side or low side applications.
Dedicated high side drivers make life easier the control ic drivers from international rectifier provide.
Two scenarios was tested vin 56vdc in both case.
Usually the high side of the load.
Its 3 high side and 3 low side output stages are powerful enough to drive mosfets with a gate charge of 400 nc with rise and fall times of approximately 150 ns.
A bootstrap capacitor from vboost to the fet source pin supplies charge to quickly enhance the gate output during.
Drives the gate of an external power mosfet.
Also limits vgs to 15v maximum to prevent gate to source damage.